一、个人简介

陈静静，博士，主要研究内容为基于新型量子材料进行微纳米器件的加工和制备及量子电输运测量，致力于发现新奇的量子效应，并利用这些新材料和新效应探索拓扑量子计算。

近期主要关注的是超导材料及约瑟夫森结等量子器件的制备及研究，研究外尔超导体T_d-MoTe₂、Kagome超导体、基于拓扑半金属Cd₃As₂的约瑟夫森结等器件中的超导电输运性质。主要涉及低温电学测量、微纳加工、二维材料转移等一系列技术。

二、教育背景

2010.09-2015.07    北京大学 物理学院 凝聚态物理学 博士

2006.09-2010.07    西安交通大学 理学院 应用物理学 学士

三、工作经历

2025.01-至今    深圳国际量子研究院 副研究员

2019.02-2024.12    南方科技大学 助理研究员

四、代表性论文

1. J. Chen, W. Xu, Z. Tan, Z. Pan, P. Zhu, Z.-M. Liao, and D. Yu, Superconducting Proximity in Intrinsic Magnetic Topological Insulator MnBi₂Te₄–NbN Hybrid Device Modulated by Coulomb Blockade Effect, Nano Lett. 22, 6484 (2022).

2. C.-G. Chu et al., Broad and colossal edge supercurrent in Dirac semimetal Cd₃As₂ Josephson junctions, Nat. Commun. 14, 6162 (2023).

3. W.-S. Du et al., Superconducting diode effect and large magnetochiral anisotropy in T_d-MoTe₂ thin film, Phys. Rev. B 110, 174509 (2024).

4. T. Zhou et al., Superconducting diode effect in the Weyl semimetal T_d -MoTe₂ that has a surface modulated by Al nanoparticles, Nanoscale 17, 5888 (2025).

5. N. Li, C.-G. Chu, J.-J. Chen, A.-Q. Wang, Z.-B. Tan, Z.-C. Pan, Z.-H. Chen, D.-P. Yu, and Z.-M. Liao, Gate-switchable SQUID based on Dirac semimetal Cd₃As₂ nanowires, Phys. Rev. B 107, 224513 (2023).

6. Z.-C. Pan, C.-G. Chu, J.-J. Chen, A.-Q. Wang, Z.-B. Tan, W.-Z. Xu, J. Xu, X.-M. Ma, D.-P. Yu, and Z.-M. Liao, Altshuler-Aronov-Spivak interference of one-dimensional helical edge states in MoTe₂, Phys. Rev. B 107, 045411 (2023).

7. N. Li, Z.-B. Tan, J.-J. Chen, T.-Y. Zhao, C.-G. Chu, A.-Q. Wang, Z.-C. Pan, D. Yu, and Z.-M. Liao, Gate modulation of anisotropic superconductivity in Al–Dirac semimetal Cd₃As₂ nanoplate–Al Josephson junctions, Supercond. Sci. Technol. 35, 044003 (2022).

8. W.-Z. Xu, C.-G. Chu, Z.-C. Pan, J.-J. Chen, A.-Q. Wang, Z.-B. Tan, P.-F. Zhu, X.-G. Ye, D.-P. Yu, and Z.-M. Liao, Proximity-induced superconducting gap in the intrinsic magnetic topological insulator MnBi₂Te₄, Phys. Rev. B 105, 184515 (2022).

9. J.-J. Chen, J. Meng, Y.-B. Zhou, H.-C. Wu, Y.-Q. Bie, Z.-M. Liao, and D.-P. Yu, Layer-by-layer assembly of vertically conducting graphene devices, Nat. Commun. 4, 1921 (2013).

10. J. J. Chen et al., Photovoltaic Effect and Evidence of Carrier Multiplication in Graphene Vertical Homojunctions with Asymmetrical Metal Contacts, ACS Nano 9, 8851 (2015).